100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE(N-CHANNEL)

The UTC UTT2N10 is a complementary enhancement modeMOSFET H-BRIDGE, it uses UTC advanced technology to providecustomers low on resistance, low gate charge and low thresholdvoltage.The UTC UTT2N10 is universally applied in DC-AC Inverters andDC Motor control. • N-CHANNEL\n• RDS(on) < 1.0Ω @VGS = 4.5V\n• High switching speed;

UTC

友顺

COMPLEMENTARY ENHANCEMENT MODE MOSFET

文件：200.51 Kbytes 页数：3 Pages

UTC

友顺

2A, 20V N-CHANNEL MOSFET

Features N-Channel SOT-23 Package 5V Logic Level Control Excellent Rdc(on)and Low Gate Charge Lead free prouduct is acquired

文件：863.68 Kbytes 页数：5 Pages

YFWDIODE

佑风微

2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

Description These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：46.73 Kbytes 页数：4 Pages

INTERSIL

2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished th

文件：35.55 Kbytes 页数：5 Pages

INTERSIL

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.35 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ SOT-223 CAN BE WAVE OR REFLOW SOLDERED ■ AVAILABLE IN TAPE AND REEL ON REQUEST ■ 150 °C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HARD DISK DRIVER

文件：86.66 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体