N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET??II POWER MOSFET

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Digital constant-current controller

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STMICROELECTRONICS

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N沟道60V - 0.07 Ohm - 3A - SOT-223 StripFET(TM) II功率MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique \\\"Single Feature Size™\\\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable ma • Exceptional dv/dt capability \n• Avalanche rugged technology \n• 100% avalanche tested;

ST

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N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

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丝印：3NF06L；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

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TECHPUBLIC

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N-channel 60 V, 0.07 廓, 4 A, SOT-223 STripFET??II Power MOSFET

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STMICROELECTRONICS

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N-Channel 60-V (D-S) MOSFET

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N-channel 60 V, 0.07 廓, 4 A, SOT-223 STripFET??II Power MOSFET

文件：251.94 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N沟道60 V、0.07 Ohm典型值、4 A STripFET II功率MOSFET，SOT-223封装

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low threshold drive;

ST

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