N-channel 650 V, 1 typ., 4 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

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丝印：8N6LF3；Package：PowerFLAT；Automotive-grade N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 package

Features  AEC-Q101 qualified  Logic level VGS(th)  175 °C maximum junction temperature  100 avalanche rated  Wettable flank package Applications  Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed

文件：976.39 Kbytes 页数：15 Pages

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丝印：8P4F6；Package：PowerFLAT；P-channel 40 V, 0.0175 廓 typ.,8 A, STripFET??F6 Power MOSFET in a PowerFLAT??3.3 x 3.3 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness

文件：372.48 Kbytes 页数：14 Pages

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N-channel 40V - 0.0042ohm - 80A - PowerFLAT (6x5) STripFET Power MOSFET for DC-DC conversion

文件：347.03 Kbytes 页数：12 Pages

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N-CHANNEL 30V - 0.0045ohm - 80A PowerFLAT(6X5) STripFET II MOSFET

文件：344.62 Kbytes 页数：9 Pages

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N-channel 60 V, 0.0057 廓, 19 A PowerFLAT??5x6 STripFET??Power MOSFET

文件：534.39 Kbytes 页数：15 Pages

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High avalanche ruggedness

文件：1.00926 Mbytes 页数：16 Pages

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丝印：8DN10LF3；Package：PowerFLAT5x6doubleisland；Automotive-grade dual N-channel 100 V, 25 m??typ., 7.8 A STripFET??F3 Power MOSFET in a PowerFLAT??5x6 double island package

文件：917.81 Kbytes 页数：15 Pages

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Automotive-grade dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package

文件：1.043589 Mbytes 页数：18 Pages

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丝印：8DN6LF6；Package：PowerFLAT；Automotive-grade dual N-channel 60 V, 21 m廓 typ., 32 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 DI package

文件：939.17 Kbytes 页数：16 Pages

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