汽车级双路N沟道60 V、21 mOhm典型值、32 A STripFET F6功率MOSFET，PowerFLAT 5x6双岛封装

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss \n• Wettable flank package;

ST

意法半导体

丝印：8DN6LF6；Package：PowerFLAT；Automotive-grade dual N-channel 60 V, 21 m廓 typ., 32 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 DI package

文件：939.17 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade dual N-channel 60 V, 21 m typ., 8 A STripFET F6 Power MOSFET in a SO-8 package

Features • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level Description This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The r

文件：315.62 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

DFN5X6

ST/意法

上传：深圳市富芯乐电子科技有限公司

QFN8

ST

上传：深圳市赛特兴科技有限公司