Automotive-grade dual N-channel 60 V, 21 m typ., 8 A STripFET F6 Power MOSFET in a SO-8 package

Features • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level Description This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The r

文件：315.62 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

汽车级双路N沟道60 V、21 mOhm典型值、8 A STripFET F6功率MOSFET，SO-8封装

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss \n• Logic level;

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意法半导体

Automotive-grade dual N-channel 60 V, 21 m廓 typ., 32 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 DI package

文件：939.17 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

SOP8

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QFP-48

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