STS8DN6LF6AG

Automotive-grade dual N-channel 60 V, 21 m typ., 8 A STripFET F6 Power MOSFET in a SO-8 package

Features •AEC-Q101qualified •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness •Lowgatedrivepowerloss •Logiclevel Description ThisdeviceisadualN-channelPowerMOSFETdevelopedusingtheSTripFETF6 technologywithanewtrenchgatestructure.Ther

STS8DN6LF6AG

汽车级双路N沟道60 V、21 mOhm典型值、8 A STripFET F6功率MOSFET，SO-8封装; • AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss \n• Logic level;

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.\n\n

STL8DN6LF6AG

Automotive-gradedualN-channel60V,21m廓typ.,32ASTripFET??F6PowerMOSFETinaPowerFLAT??5x6DIpackage