STL3N80K5中文资料N沟道800 V、2.8 Ohm典型值、2.5 A MDmesh K5功率MOSFET，PowerFLAT 5x6 VHV封装数据手册ST规格书

描述 Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

特性 Features

• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected

简介

STL3N80K5属于分立半导体产品的晶体管-FETMOSFET-单个。由ST制造生产的STL3N80K5晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。