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STL19N60DM2数据手册ST中文资料规格书
STL19N60DM2规格书详情
描述 Description
This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance RDS(on)
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
技术参数
- 制造商编号
:STL19N60DM2
- 生产厂家
:ST
- Package
:PowerFLAT 8x8 HV
- Grade
:Industrial
- VDSS(V)
:600
- RDS(on)_max(@ VGS=10V)(Ω)
:0.32
- Drain Current (Dc)_max(A)
:11
- PTOT_max(W)
:90
- Qg_typ(nC)
:20
- Features
:Fast recovery diode
- Reverse Recovery Time_typ(ns)
:125
- Qrr_typ(nC)
:675
- Peak Reverse Current_nom(A)
:11
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
22+ |
8PowerVDFN |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST(意法半导体) |
24+ |
VDFN8 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ST/意法半导体 |
21+ |
PowerFLAT-8x8-HV-5 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
23+ |
PowerFLAT-8x8-HV-5 |
16900 |
公司只做原装,可来电咨询 |
询价 | ||
ST/意法半导体 |
25+ |
PowerFLAT-8x8-HV-5 |
10000 |
原装公司现货 |
询价 | ||
ST/意法半导体 |
22+ |
PowerFLAT-8x8-HV-5 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
STMicroelectronics |
2022+ |
8-PowerVDFN |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ST |
20+ |
DFN8X8 |
10323 |
终端可以免费供样,支持BOM配单! |
询价 | ||
STMicroelectronics |
21+ |
PowerFlat?(8x8) HV |
3000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
ST/意法半导体 |
23+ |
PowerFLAT-8x8-HV-5 |
12820 |
正规渠道,只有原装! |
询价 |