首页>STL190N4F7AG>规格书详情
STL190N4F7AG中文资料汽车级N沟道40 V、1.68 mOhm典型值、120 A STripFET F7功率MOSFET,PowerFLAT 5x6封装数据手册ST规格书
STL190N4F7AG规格书详情
描述 Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
特性 Features
• Designed for automotive applications and AEC-Q101 qualified
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
• Wettable flank package
技术参数
- 制造商编号
:STL190N4F7AG
- 生产厂家
:ST
- Package
:PowerFLAT 5x6 WF
- Grade
:Automotive
- VDSS(V)
:40
- RDS(on)_max(@ VGS=10V)(Ω)
:0.002
- Drain Current (Dc)_max(A)
:120
- PTOT_max(W)
:127
- Qg_typ(nC)
:41
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
DFN5X6 |
25800 |
原装正品支持实单 |
询价 | ||
ST/意法半导体 |
24+ |
PowerFLAT-5x6-8 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
2511 |
PowerFLAT-5x6-8 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST/意法半导体 |
23+ |
PowerFLAT-5x6-8 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/意法半导体 |
23+ |
PowerFLAT-5x6-8 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
24+ |
PowerFLAT-5x6-8 |
16900 |
原装现货,实单价优 |
询价 | ||
ST |
23+ |
DFN |
35680 |
只做进口原装QQ:373621633 |
询价 | ||
ST |
22+ |
8PowerSMD Flat Leads |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST/意法半导体 |
21+ |
PowerFLAT-5x6-8 |
8860 |
只做原装,质量保证 |
询价 |