汽车级N沟道40 V、1.68 mOhm典型值、120 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. • Designed for automotive applications and AEC-Q101 qualified \n• Among the lowest RDS(on) on the market \n• Excellent FoM (figure of merit) \n• Low Crss/Ciss ratio for EMI immunity \n• High avalanche ruggedness \n• Wettable flank package;

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意法半导体

High avalanche ruggedness

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STMICROELECTRONICS

意法半导体

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QFN

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STM
DFN5X6

STM

信盛

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DFN5X6

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