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18N60M2

N-channel600V,0.255typ.,13AMDmeshM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STB18N60M2

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V APPLICATIONS ·Switching ·LLCconverters,resonantconverters

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB18N60M2

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STB18N60M2

N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Application •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh™M2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STF18N60M2

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Powersupply •Switchingapplicati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF18N60M2

Lowgateinputresistance

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencycon

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STFH18N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STFU18N60M2

N-channel600V,0.255typ.,13AMDmeshM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STI18N60M2

N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Application •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh™M2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STL18N60M2

N-channel600V,0.278廓typ.,9AMDmeshIIPlus??lowQgPowerMOSFETinaPowerFLAT??5x6HVpackage

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh™M2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencyco

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

供应商型号品牌批号封装库存备注价格
ST/意法
22+
DFN-85x6
20000
深圳原装现货正品有单价格可谈
询价
ST
23+
DFN
50000
全新原装正品现货,支持订货
询价
ST
1808
只做正品
询价
ST/意法
23+
DFN5x6
360000
交期准时服务周到
询价
ST/意法半导体
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
询价
STM
23+
PowerFl
8650
受权代理!全新原装现货特价热卖!
询价
STM
24+
PowerFl
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
STMicroelectronics
21+
PowerFlat?(5x6)HV
3000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
STM
1809+
DFN-8
1675
就找我吧!--邀您体验愉快问购元件!
询价
更多STL18N60M2-CUTTAPE供应商 更新时间2025-5-21 14:50:00