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STB18N60M2中文资料意法半导体数据手册PDF规格书
STB18N60M2规格书详情
描述 Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
特性 Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100 avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
产品属性
- 型号:
STB18N60M2
- 制造商:
STMicroelectronics
- 功能描述:
POWER MOSFET - Tape and Reel
- 功能描述:
MOSFET N-CH 600V D2PAK
- 功能描述:
STB18N60M2 Series 600 V 13 A 280 mOhm N-channel Power MOSFET - TO-263-3
- 功能描述:
N-channel 600 V, 0.255
- 功能描述:
N-channel 600 V, 0.255 ?X typ., 13 A MDmesh II Plus? low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
24+ |
TO-263-3 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
ST/意法 |
24+ |
NA/ |
115240 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
25+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8080 |
只做原装,质量保证 |
询价 | ||
ST/意法 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
ST |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
询价 | ||
ST/意法 |
22+ |
TO-263 |
14100 |
原装正品 |
询价 | ||
ST |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
STMicroelectronics |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |