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STB18N55M5中文资料意法半导体数据手册PDF规格书
STB18N55M5规格书详情
Description
The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
■ DPAK worldwide best RDS(on)
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100 avalanche tested
Application
Switching applications
产品属性
- 型号：
STB18N55M5
- 功能描述：
MOSFET N-Ch 550V 0.8 Ohm Mdmesh V 13A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
9959 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST/意法 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST |
24+ |
TO263 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
ST |
25+23+ |
TO220 |
20429 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST |
23+ |
TO263 |
10000 |
正规渠道,只有原装! |
询价 | ||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
ST/意法 |
22+ |
SOT-263 |
20000 |
保证原装正品,假一陪十 |
询价 |
