丝印：120N10F8；Package：PowerFLAT；N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features • MSL1 grade • 175 °C operating temperature • 100 avalanche tested Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing

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N-channel 20 V, 0.002, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package

文件：655.21 Kbytes 页数：18 Pages

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Wettable flank package

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High avalanche ruggedness

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High avalanche ruggedness

文件：780.48 Kbytes 页数：14 Pages

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N-channel 20V - 0.0025ohm - 120A - PowerFLAT(6x5) STripFETIII Power MOSFET

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汽车级N沟道40 V、2.9 mOhm典型值、55 A STripFET F6功率MOSFET，PowerFLAT 5x6封装

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss \n• Wettable flank package;

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Automotive-grade N-channel 40 V, 3.0 mOhm typ., 55 A STripFET F6 in a PowerFLAT 5x6 package

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with anew trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) inall packages.\n • Designed for automotive applications and AEC-Q101 qualified\n• Very low on-resistance\n• Very low gate charge• High avalanche ruggedness\n• Low gate drive power loss\n• Wettable flank package;

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N-channel 20 V, 0.002, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package

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