首页>STI21N65M5>规格书详情
STI21N65M5中文资料N沟道650 V、0.150 Ohm典型值、17 A MDmesh M5功率MOSFET，I2PAK封装数据手册ST规格书
STI21N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
• Worldwide best RDS(on) * area
• Higher VDSS rating
• High dv/dt capability
• Excellent switching performance
• 100% avalanche tested
技术参数
- 制造商编号
：STI21N65M5
- 生产厂家
：ST
- Package
：I2PAK
- Grade
：Industrial
- VDSS(V)
：650
- RDS(on)_max(@ VGS=10V)(Ω)
：0.179
- Drain Current (Dc)_max(A)
：17
- PTOT_max(W)
：125
- Qg_typ(nC)
：50
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3600 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
24+ |
NA |
14280 |
强势渠道订货 7-10天 |
询价 | ||
ST |
17+ |
I2PAK |
350 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
24+ |
TO-262 |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
STMICROEL |
23+ |
NA |
634 |
专做原装正品,假一罚百! |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST/意法半导体 |
21+ |
TO-262-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST全系列 |
25+23+ |
I2PAK |
25860 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法半导体 |
21+ |
TO-262-3 |
8860 |
只做原装,质量保证 |
询价 |
