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GB20NC60V

30A-600V-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features •Highfrequencyoperationupto50kHz •LowerCRES/CIESratio(nocross-conduction susceptibility) •Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GP20NC60V

30A-600V-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features •Highfrequencyoperationupto50kHz •LowerCRES/CIESratio(nocross-conduction susceptibility) •Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GW20NC60V

30A-600V-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features •Highfrequencyoperationupto50kHz •LowerCRES/CIESratio(nocross-conduction susceptibility) •Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GW20NC60VD

N-CHANNEL30A-600VTO-247VeryFastPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“V”identifiesafamilyoptimizedforhighfrequencyapplications. GeneralFeatures

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGB20NC60V

30A-600V-veryfastIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGB20NC60V

30A-600V-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features •Highfrequencyoperationupto50kHz •LowerCRES/CIESratio(nocross-conduction susceptibility) •Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGP20NC60V

30A-600V-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features •Highfrequencyoperationupto50kHz •LowerCRES/CIESratio(nocross-conduction susceptibility) •Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGP20NC60V

30A-600V-veryfastIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGP20NC60V

N-CHANNEL30A-600V-TO-220/TO-247VeryFastPowerMESHIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGW20NC60V

30A-600V-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features •Highfrequencyoperationupto50kHz •LowerCRES/CIESratio(nocross-conduction susceptibility) •Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGW20NC60V

30A-600V-veryfastIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGW20NC60V

N-CHANNEL30A-600V-TO-220/TO-247VeryFastPowerMESHIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGW20NC60VD

N-CHANNEL30A-600VTO-247VeryFastPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“V”identifiesafamilyoptimizedforhighfrequencyapplications. GeneralFeatures

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

供应商型号品牌批号封装库存备注价格
ST
22+23+
TO-247
26001
绝对原装正品全新进口深圳现货
询价
ST
TO-247
500
进口原装现货假一赔万力挺实单
询价
ST
23+
TO-247
16900
正规渠道,只有原装!
询价
ST
TO-247
36900
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST
22+
TO-247
16900
支持样品 原装现货 提供技术支持!
询价
ST
23+
TO247
7750
全新原装优势
询价
ST
23+
TO-247
8795
询价
ST
07+/08+
TO-247-3
734
询价
ST
10+
5000
原装正品长期供货,如假包赔包换 徐小姐13714450367
询价
STMICROELEC
16+
7860
原装现货假一罚十
询价
更多STGW20NC60U供应商 更新时间2024-9-26 9:50:00