STGD5H60DF资料datasheet下载供应价格ISC-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
STGD5H60DF	文件：342.54 Kbytes Page：2 Pages	Trench Field-stop IGBT DESCRIPTION · High ruggedness, temperature stable behavior · Very low VCEsat · Very tight parameter distribution · Tight parameter distribution APPLICATIONS · Induction cooker · Microwave ovens 文件：342.54 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
STGD5H60DF	文件：872.71 Kbytes Page：30 Pages	丝印：GD5H60DF；Package：DPAK；Trench gate field-stop IGBT, H series 600 V, 5 A high speed Description These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequen 文件：872.71 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STGD5H60DF	文件：300 bytes Page：1 Pages	600 V、5 A高速沟槽栅场截止H系列IGBT These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Further • High-speed switching \n• Tight parameter distribution \n• Safe paralleling \n• Low thermal resistance \n• Short-circuit rated \n• Ultrafast soft recovery antiparallel diode;	ST 意法半导体	ST
STGF5H60DF	文件：872.71 Kbytes Page：30 Pages	Trench gate field-stop IGBT, H series 600 V, 5 A high speed Description These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequen 文件：872.71 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STGP5H60DF	文件：872.71 Kbytes Page：30 Pages	Trench gate field-stop IGBT, H series 600 V, 5 A high speed Description These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequen 文件：872.71 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

技术参数

Package：
DPAK
Grade：
Industrial
VCES_max(V)：
600
PTOT_max(W)：
83
IC_max(@ Tc=100°C)(A)：
5
IC_max(@ Tc=25°C)(A)：
10
IF_max(@ Tc=100°C)(A)：
5
IF_max(@ Tc=25°C)(A)：
10
VCE(sat)_typ(V)：
1.5
VF_typ(V)：
2.1
Qg_typ(nC)：
43
Eon_typ(mJ)：
0.06
Eoff_typ(mJ)：
0.08

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	STGD5H60DF	ST(意法半导体)	24+	TO-252	2669	原厂订货渠道,支持BOM配单一站式服务	询价
中天科工半导体（深圳）有限公司	STGD5H60DF	ST/意法	25+	DPAK-3	32360	ST/意法全新特价STGD5H60DF即刻询购立享优惠#长期有货	询价
深圳市坤融电子科技有限公司	STGD5H60DF	ST/意法	2025+	TO-252	5000	原装进口,免费送样品!	询价
深圳市瑞卓芯科技有限公司	STGD5H60DF	ST/意法	22+	TO-252	20000	原装正品	询价
上海意淼电子科技有限公司	STGD5H60DF	ST/意法半导体	23+	TO-252	5500	全新原装假一赔十	询价
深圳市中联芯电子有限公司	STGD5H60DF	ST	24+	TO252	20000	只做原装有挂有货假一赔十	询价
深圳市慧拓科技有限公司	STGD5H60DF	ST	2222+		15000	全新原装公司现货	询价
柒号芯城电子商务(深圳)有限公司	STGD5H60DF	ST	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市科恒伟业电子有限公司	STGD5H60DF	ST	2450+	TO-252	9485	只做原厂原装正品终端客户免费申请样品	询价
深圳市明嘉莱科技有限公司	STGD5H60DF	ST/意法	2122+	明嘉莱只做原装正品现货	2510000	TO-252	询价

更多STGD5H60DF供应商更新时间2026-1-24 8:12:00

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