600 V、5 A高速沟槽栅场截止H系列IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Further • High-speed switching \n• Tight parameter distribution \n• Safe paralleling \n• Low thermal resistance \n• Short-circuit rated \n• Ultrafast soft recovery antiparallel diode;

ST

意法半导体

丝印：GP5H60DF；Package：TO-220；Trench gate field-stop IGBT, H series 600 V, 5 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequen

文件：872.71 Kbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：TRENCH GATE FIELD-STOP IGBT, H S

STMICROELECTRONICS

意法半导体

Ultrafast Rectifiers

文件：53.26 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世威世科技公司

Ultrafast Rectifier

文件：143.14 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Ultrafast Rectifier Diode

FEATURES · Superfast Recovery Time for High Efficiency · Low Leakage Current · Glass Passivated Chip Junction APPLICATIONS · Switching Mode Power Supplies · Inverters · DC/DC Converters

文件：257.75 Kbytes 页数：2 Pages

ISC

无锡固电