STGP5H60DF分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

STGP5H60DF属于分立半导体产品的晶体管-UGBT、MOSFET-单。由意法半导体集团制造生产的STGP5H60DF晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

Description

These devices are IGBTs developed using an

advanced proprietary trench gate and field-stop

structure. The devices are part of the H series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of high switching

frequency converters. Moreover, a slightly

positive VCE(sat) temperature coefficient and very

tight parameter distribution result in safer

paralleling operation.

Features

• High speed switching

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Short-circuit rated

• Ultrafast soft recovery antiparallel diode

Applications

• Motor control

• UPS, PFC