丝印：GD5H60DF；Package：DPAK；Trench gate field-stop IGBT, H series 600 V, 5 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequen

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STMICROELECTRONICS

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