N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：111.2 Kbytes 页数：8 Pages

Samhop

三合微科

Mosfets

Samhop

三合微科

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：111.2 Kbytes 页数：8 Pages

Samhop

三合微科

N-Channel MOSFET uses advanced trench technology

文件：887.25 Kbytes 页数：4 Pages

DOINGTER

杜因特

Super high dense cell design for low RDS(ON).

文件：122.68 Kbytes 页数：8 Pages

Samhop

三合微科