N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：196.64 Kbytes 页数：9 Pages

Samhop

三合微科

N-Channel 30-V (D-S) MOSFET

文件：1.68803 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Logic Level E nhancement Mode Field Effect Transistor

Samhop

三合微科

HIGH EFFICIENCY ULTRAFAST DIODE

DESCRIPTION The STTH302 which is using STs new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. FEATURES AND BENEFITS ■ Ver

文件：43.47 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

HIGH EFFICIENCY ULTRAFAST DIODE

DESCRIPTION The STTH302 which is using STs new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. FEATURES AND BENEFITS ■ Ver

文件：43.47 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

HIGH EFFICIENCY ULTRAFAST DIODE

DESCRIPTION The STTH302S, which is using ST’s new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. FEATURES AND BENEFITS ■

文件：71.12 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体