STD13003中文资料高压快速切换NPN功率晶体管数据手册ST规格书

描述 Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies.

特性 Features

• THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (Suffix \\\"-1\\\")
• SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix \\\"T4\\\")
• REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES
• LOW SPREAD OF DYNAMIC PARAMETERS
• MEDIUM VOLTAGE CAPABILITY
• VERY HIGH SWITCHING SPEED
• MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

简介

STD13003属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由ST制造生产的STD13003晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。