STD12N60DM2AG中文资料汽车级N沟道600 V、0.370 Ohm典型值、10 A MDmesh DM2功率MOSFET，DPAK封装数据手册ST规格书

描述 Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

特性 Features

• AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected

简介

STD12N60DM2AG属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的STD12N60DM2AG晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。