STD12N60DM2AG

Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package

Features •AEC-Q101qualified •Fast-recoverybodydiode •Extremelylowgatechargeandinputcapacitance •Lowon-resistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM2fastre

STD12N60DM2AG

汽车级N沟道600 V、0.370 Ohm典型值、10 A MDmesh DM2功率MOSFET，DPAK封装; • AEC-Q101 qualified \n• Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.\n\n

STD12N60DM2AG

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：AUTOMOTIVE-GRADE N-CHANNEL 600 V

STB12N60DM2AG

Automotive-gradeN-channel600V,380mtyp.,10AMDmeshDM2PowerMOSFETinaD²PAKpackage

Features •AEC-Q101qualified •Fast-recoverybodydiode •Extremelylowgatechargeandinputcapacitance •Lowon-resistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM2fastre