STD127DT4数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.

特性 Features

• NPN transistor
• High voltage capability
• Low spread of dynamic parameters
• Minimum lot-to-lot spread for reliable operation
• Very high switching speed
• Integrated anti-parallel collector - emitter diode

简介

STD127DT4属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的STD127DT4晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。