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STD11N60DM2数据手册ST中文资料规格书
STD11N60DM2规格书详情
描述 Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
技术参数
- 制造商编号
:STD11N60DM2
- 生产厂家
:ST
- Package
:DPAK
- Grade
:Industrial
- VDSS(V)
:600
- RDS(on)_max(@ VGS=10V)(Ω)
:0.42
- Drain Current (Dc)_max(A)
:10
- PTOT_max(W)
:110
- Qg_typ(nC)
:16.5
- Features
:Fast recovery diode
- Reverse Recovery Time_typ(ns)
:90
- Qrr_typ(nC)
:248
- Peak Reverse Current_nom(A)
:5.5
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
2020+ |
TO-252-3 |
7600 |
只做原装正品,卖元器件不赚钱交个朋友 |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
10000 |
原装公司现货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
20000 |
原装进口正品 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
16960 |
原装正品现货支持实单 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
STMICROELECTRONICS |
24+ |
con |
2500 |
优势库存,原装正品 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
20000 |
现货 |
询价 | ||
ST/意法 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法 |
21+ |
NA |
20000 |
百域芯优势 实单必成 可开13点增值税 |
询价 |