N沟道600 V、0.370 Ohm典型值、10 A MDmesh DM2功率MOSFET，DPAK封装

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shif • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

ST

意法半导体

N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package

文件：822.24 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package

文件：713.99 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package

文件：716.35 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体