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STD11NM65N数据手册ST中文资料规格书
STD11NM65N规格书详情
描述 Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
特性 Features
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
技术参数
- 制造商编号
:STD11NM65N
- 生产厂家
:ST
- Package
:DPAK
- Grade
:Industrial
- VDSS(V)
:650
- RDS(on)_max(@ VGS=10V)(Ω)
:0.455
- Drain Current (Dc)_max(A)
:11
- PTOT_max(W)
:110
- Qg_typ(nC)
:29
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STM |
21+ |
2500 |
TO-252-3 (DPAK) |
询价 | |||
ST/意法半导体 |
21+ |
TO-252-3 |
10000 |
原装公司现货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
20000 |
原装进口正品 |
询价 | ||
ST/意法 |
24+ |
TO-252-3(DPAK) |
8600 |
正品原装,正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
20000 |
现货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
16960 |
原装正品现货支持实单 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83268577邹小姐 |
询价 | ||
ST |
22+ |
NA |
7500 |
原装正品支持实单 |
询价 |