Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package

Features • AEC-Q101 qualified • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastre

文件：559.11 Kbytes 页数：15 Pages

STMICROELECTRONICS

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丝印：12N60M2；Package：DPAK；N-channel 600 V, 0.395 Ω typ., 9 A MDmesh M2 Power MOSFET in a DPAK package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout

文件：590.55 Kbytes 页数：19 Pages

STMICROELECTRONICS

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丝印：12N60M6；Package：DPAK；N-channel 600 V, 390 mΩ typ., 9 A, MDmesh M6 Power MOSFET in a DPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh M6 technology incorp

文件：1.00839 Mbytes 页数：15 Pages

STMICROELECTRONICS

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丝印：12N60DM6；Package：DPAK；N-channel 600 V, 345 m廓 typ., 10 A MDmesh DM6 Power MOSFET in a DPAK package

文件：326.86 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-channel 600 V, 345 mOhm typ., 10 A MDmesh DM6 Power MOSFET in a DPAK package

该高电压N-沟道功率MOSFET来自MDmesh DM6快速恢复二极管系列。与之前的MDmesh快速恢复二极管相比，DM6兼具超低恢复电荷（Qrr）和超快恢复时间（trr），并且在单位面积的RDS(on)值方面有了极大改进，采用市场上最高效的开关行为之一，适用于要求最苛刻的高效桥式拓扑和ZVS移相转换器。 • 快速恢复体二极管 \n• 与上一代相比，具有更低的单位面积RDS(on)值 \n• 低栅极电荷、输入电容和电阻 \n• 经过100％雪崩测试 \n• 非常高的dv / dt耐用性 \n• 稳压保护;

ST

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N沟道600 V、0.395 Ohm典型值、9 A MDmesh M2功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

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N-channel 600 V, 0.29 Ohm typ., 12 A MDmesh M6 Power MOSFET in a DPAK package

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses \n• Lower RDS(on) per area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

ST

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Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：AUTOMOTIVE-GRADE N-CHANNEL 600 V

STMICROELECTRONICS

意法半导体