N - CHANNEL 100V - 0.12 ohm - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR

N - CHANNEL 100V - 0.12 Ω - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.12 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175 °C OPERATING TEMPERATURE ■ LOW THRESHOLD DRIVE ■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE APPLI

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STMICROELECTRONICS

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N-Channel 100 V (D-S) MOSFET

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N - CHANNEL 100V - 0.12 ohm - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR

ST

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N-Channel 100 V (D-S) MOSFET

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VBSEMI

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N-Channel 100 V (D-S) MOSFET

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VBSEMI

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100V N-Channel DTMOS

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