N - CHANNEL 600V - 1.0 OMH - 7.2A - I2PAK/D2PAK PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

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N-Channel 650V (D-S) Power MOSFET

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N - CHANNEL 600V - 1.0 OMH - 7.2A - I2PAK/D2PAK PowerMESH MOSFET

ST

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N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has de signed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding perfomances. The suffix F identifies a family optimized to achieve very low switching switching times for

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N-CHANNEL 7A - 600V DPAK PowerMESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequ

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N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with

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