N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.30413 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：313.79 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道650 V、0.56 Ohm典型值、7 A MDmesh M5功率MOSFET，D2PAK封装

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and supe • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.30413 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

a Phase-Dimmable, Primary-Side Regulated LED Driver

文件：1.245 Mbytes 页数：26 Pages

TI

德州仪器

isc N-Channel MOSFET Transistor

文件：324.62 Kbytes 页数：2 Pages

ISC

无锡固电