STB8N65M5

N沟道650 V、0.56 Ohm典型值、7 A MDmesh M5功率MOSFET，D2PAK封装; • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.\n\n

STB8N65M5

N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STB8N65M5

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

STD8N65M5

iscN-ChannelMOSFETTransistor

STD8N65M5

N-channel650V,0.56廓,7AMDmesh??VPowerMOSFET

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STD8N65M5

aPhase-Dimmable,Primary-SideRegulatedLEDDriver

STF8N65M5

IscN-ChannelMOSFETTransistor

STF8N65M5

N-channel650V,0.56廓,7AMDmesh??VPowerMOSFET

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STI8N65M5

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=60mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingappl

STI8N65M5

N-channel650V,0.56廓,7AMDmesh??VPowerMOSFET

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda