STB8N65M5中文资料意法半导体数据手册PDF规格书
STB8N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
■ Worldwide best RDS(on) * area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100 avalanche tested
Applications
■ Switching applications
产品属性
- 型号：
STB8N65M5
- 功能描述：
MOSFET MDmesh V N-Ch 650V 710V VDSS <0.6ohm 7A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ST/意法半导体 |
2023+ |
TO-263-3 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
询价 | ||
ST/意法半导体 |
25 |
TO-263-3 |
6000 |
原装正品 |
询价 | ||
ST |
815 |
只做正品 |
询价 | ||||
ST/意法半导体 |
24+ |
TO-263-3 |
20000 |
现货 |
询价 | ||
ST |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST/意法 |
24+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-263-3 |
10000 |
十年沉淀唯有原装 |
询价 | ||
ST/意法半导体 |
2511 |
TO-263-3 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
STMICROELECTRONICS |
23+ |
NA |
2000 |
电子元器件供应原装现货. 优质独立分销。原厂核心渠道 |
询价 |
