N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by

文件：532.8 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by

文件：532.8 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET

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意法半导体

N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by

文件：532.8 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by

文件：532.8 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH?줚II MOSFET

文件：240.63 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体