N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET

N - CHANNEL ENHANCEMENT MODE Power MESH™ MOSFET ■ TYPICAL RDS(on) = 0.75 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ VERY LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ LOW LEAKAGE CURRENT ■ APPLICATIO

文件：93.56 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.28 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

文件：108.41 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

文件：108.41 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体