N-CHANNEL 250V - 0.38ohm - 8A D2PAK MESH OVERLAY??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

文件：427.5 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 250V - 0.38ohm - 8A D2PAK MESH OVERLAY™ MOSFET

ST

意法半导体

N-CHANNEL 250V - 0.38ohm - 8A DPAK MESH OVERLAY??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

文件：122.6 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

文件：329.07 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.19 Kbytes 页数：2 Pages

ISC

无锡固电