STB6NC90Z规格书应用电路市场行情-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
STB6NC90Z	文件：532.81 Kbytes Page：13 Pages	N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by 文件：532.81 Kbytes 页数：13 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STB6NC90Z-1	文件：532.81 Kbytes Page：13 Pages	N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by 文件：532.81 Kbytes 页数：13 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STB6NC90Z	文件：300 bytes Page：1 Pages	N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET	ST 意法半导体	ST
STP6NC90Z	文件：532.81 Kbytes Page：13 Pages	N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by 文件：532.81 Kbytes 页数：13 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP6NC90ZFP	文件：532.81 Kbytes Page：13 Pages	N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by 文件：532.81 Kbytes 页数：13 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STW6NC90	文件：243.81 Kbytes Page：8 Pages	N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as request e 文件：243.81 Kbytes 页数：8 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

详细参数

型号：
STB6NC90Z
制造商：
STMICROELECTRONICS
制造商全称：
STMicroelectronics
功能描述：
N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宇集芯电子有限公司	STB6NC90Z	ST	24+	TO-263	90000	一级代理商进口原装现货、假一罚十价格合理	询价
深圳市澳亿芯电子科技有限公司	STB6NC90Z	ST	1709+	TO-263/D2-PAK	32500	普通	询价
深圳市安富世纪电子有限公司	STB6NC90Z	ST	23+	TO-262	50000	全新原装正品现货,支持订货	询价
深圳市河锋鑫科技有限公司	STB6NC90Z	ST	22+	TO-263	6000	十年配单,只做原装	询价
深圳市威雅利发展有限公司	STB6NC90Z	ST	03+	TO-262	14	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳和润天下电子科技有限公司	STB6NC90Z	ST/意法	22+	TO-263	100055		询价
深圳市宏捷佳电子科技有限公司	STB6NC90Z	ST	25+	TO-263	37650	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市诺美思科技有限公司	STB6NC90Z	SST		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市昌和盛利电子有限公司	STB6NC90Z	ST	NEW	TO-263	8795	代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订	询价
深圳市恒创达实业有限公司	STB6NC90ZT4	ST	17+	D2PAK	6200		询价

更多STB6NC90Z供应商更新时间2025-9-30 15:03:00

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