丝印：B6NK60Z；Package：I2PAK；N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：578.48 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 1廓 - 6A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??Power MOSFET

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：558.59 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：B6NK60Z；Package：I2PAK；N-channel 600 V - 1 廓 - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??Power MOSFET

文件：444.64 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V - 1 Ohm - 6 A - I2PAK有齐纳管保护的SuperMESH(TM) 功率MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalanche tested;

ST

意法半导体