首页>STB22N60DM6>规格书详情
STB22N60DM6数据手册ST中文资料规格书
STB22N60DM6规格书详情
描述 Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
特性 Features
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
技术参数
- 制造商编号
:STB22N60DM6
- 生产厂家
:ST
- Package
:D2PAK
- Grade
:Industrial
- VDSS(V)
:600
- RDS(on)_max(@ VGS=10V)(Ω)
:0.14
- Drain Current (Dc)_max(A)
:15
- PTOT_max(W)
:190
- Qg_typ(nC)
:20.6
- Features
:Fast recovery diode
- Reverse Recovery Time_typ(ns)
:88
- Qrr_typ(nC)
:299
- Peak Reverse Current_nom(A)
:6.8
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
24+ |
D2PAK-3 |
10000 |
十年沉淀唯有原装 |
询价 | ||
ST/意法半导体 |
21+ |
D2PAK-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
22+ |
D2PAK-3 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
询价 | ||
ST/意法半导体 |
21+ |
D2PAK-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
23+ |
D2PAK-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
ST/意法半导体 |
23+ |
N/A |
20000 |
询价 | |||
ST/意法半导体 |
2021+ |
D2PAK-3 |
7600 |
原装现货,欢迎询价 |
询价 | ||
ST/意法半导体 |
23+ |
D2PAK-3 |
16900 |
公司只做原装,可来电咨询 |
询价 |