STB20NM60数据手册ST中文资料规格书
STB20NM60规格书详情
描述 Description
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
特性 Features
• High dv/dt and avalanche capabilities
• Low input capacitance and gate charge
• 100% avalanche tested
• Low gate input resistance
技术参数
- 制造商编号
:STB20NM60
- 生产厂家
:ST
- Package
:D2PAK
- Grade
:Industrial
- VDSS(V)
:600
- RDS(on)_max(@ VGS=10V)(Ω)
:0.29
- Drain Current (Dc)_max(A)
:20
- PTOT_max(W)
:192
- Qg_typ(nC)
:39
- Reverse Recovery Time_typ(ns)
:390
- Peak Reverse Current_nom(A)
:25
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
26050 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST(意法半导体) |
24+ |
D2PAK |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ST/意法 |
2023+ |
TO-263 |
1000 |
专注全新正品,优势现货供应 |
询价 | ||
ST |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
ST/意法 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ST |
23+ |
TO-263 |
8795 |
询价 | |||
ST |
23+ |
TO263 |
90000 |
一定原装正品 |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法 |
24+ |
TO-263 |
504143 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
ST |
25+23+ |
TO-263 |
15920 |
绝对原装正品全新进口深圳现货 |
询价 |