首页>STB21N65M5>规格书详情
STB21N65M5中文资料N沟道650 V、0.150 Ohm典型值、17 A MDmesh M5功率MOSFET，D2PAK封装数据手册ST规格书
STB21N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
• Worldwide best RDS(on) * area
• Higher VDSS rating
• High dv/dt capability
• Excellent switching performance
• 100% avalanche tested
技术参数
- 制造商编号
：STB21N65M5
- 生产厂家
：ST
- Package
：D2PAK
- Grade
：Industrial
- VDSS(V)
：650
- RDS(on)_max(@ VGS=10V)(Ω)
：0.179
- Drain Current (Dc)_max(A)
：17
- PTOT_max(W)
：125
- Qg_typ(nC)
：50
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
原装现货,实单价优 |
询价 | ||
STM |
22+ |
SMD |
30000 |
只做原装正品 |
询价 | ||
TO-263 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
ST/意法半导体 |
23+ |
TO-263-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST(意法) |
24+ |
6000 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 | |||
ST/意法半导体 |
23+ |
TO-263-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
23+ |
N/A |
20000 |
询价 | |||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 |
