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STB18NM60ND中文资料N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package数据手册ST规格书
STB18NM60ND规格书详情
描述 Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
The worldwide best R
DS(on)* area amongst the fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
技术参数
- 型号：
STB18NM60ND
- 制造商：
STMicroelectronics
- 功能描述：
POWER MOSFET - Tape and Reel
- 功能描述：
MOSFET N-CH 600V 13A D2PAK
- 功能描述：
N chan, 600V, 13A, 250 mOhms, D2Pak
- 功能描述：
Single N-Channel 600 V 0.29 Ohm 130 W Surface Mount Power Mosfet - D2PAK-3
- 功能描述：
MOSFET N-CH 600V 0.25Ohm 13A FDmesh II
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
1058 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST/意法半导体 |
24+ |
TO-263-3 |
16900 |
原装，正品 |
询价 | ||
ST/意法 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ST/意法 |
14+ |
TO-263 |
680 |
询价 | |||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
2511 |
TO-263-3 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST |
25+23+ |
TO-263 |
28343 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
只做原装,质量保证 |
询价 | ||
FAIRCHILD |
19+ |
SOT263 |
23500 |
询价 | |||
ST/意法半导体 |
23+ |
TO-263-3 |
8860 |
原装正品，支持实单 |
询价 |
