SSM6N58NU

丝印：NN8；Package：UDFN6；MOSFETs Silicon N-Channel MOS

1.Applications •PowerManagementSwitches •DC-DCConverters 2.Features (1)1.8-Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=84mΩ(max)(@VGS=4.5V) RDS(ON)=117mΩ(max)(@VGS=2.5V) RDS(ON)=180mΩ(max)(@VGS=1.8V)

SSM6N58NU

Small Low ON resistance MOSFETs; Drain current (Q1) ID 4 A \nDrain-Source voltage (Q1) VDSS 30 V \nGate-Source voltage (Q1) VGSS +/-12 V \nDrain current (Q2) ID 4 A \nDrain-Source voltage (Q2) VDSS 30 V \nGate-Source voltage (Q2) VGSS +/-12 V \nPower Dissipation PD 1 W \n;

Polarity：N-ch×2\nGeneration：U-MOSⅦ-H\nInternal Connection：Independent\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国\n

SSM6N58NU

丝印：NN8；Package：UDFN6；Power Management Switches

SSM6N58NU_V01

MOSFETs Silicon N-Channel MOS

1.Applications •PowerManagementSwitches •DC-DCConverters 2.Features (1)1.8-Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=84mΩ(max)(@VGS=4.5V) RDS(ON)=117mΩ(max)(@VGS=2.5V) RDS(ON)=180mΩ(max)(@VGS=1.8V)