丝印：NN8；Package：UDFN6；MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 180 mΩ (max) (@VGS = 1.8 V)

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丝印：NN8；Package：UDFN6；Power Management Switches

文件：235.35 Kbytes 页数：9 Pages

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MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 180 mΩ (max) (@VGS = 1.8 V)

文件：274.24 Kbytes 页数：9 Pages

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Small Low ON resistance MOSFETs

Polarity：N-ch×2\nGeneration：U-MOSⅦ-H\nInternal Connection：Independent\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current (Q1) ID 4 A \nDrain-Source voltage (Q1) VDSS 30 V \nGate-Source voltage (Q1) VGSS +/-12 V \nDrain current (Q2) ID 4 A \nDrain-Source voltage (Q2) VDSS 30 V \nGate-Source voltage (Q2) VGSS +/-12 V \nPower Dissipation PD 1 W ;

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