TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

Power Management Switch High Speed Switching Applications • Small package • Low on resistance : Ron = 0.5 Ω (max) (@VGS = −4 V) : Ron = 0.7 Ω (max) (@VGS = −2.5 V) • Low gate threshold voltage

文件：164.87 Kbytes 页数：5 Pages

TOSHIBA

东芝

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：501.74 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

Toshiba

东芝

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：490.77 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

Power Management Switch High Speed Switching Applications • Component package suitable for high-density mounting • Small Package • Low ON Resistance : Ron = 0.5 Ω (max) (@VGS = −4 V) : Ron = 0.7 Ω (max) (@VGS = −2.5 V) • Low-voltage operation possible

文件：147.88 Kbytes 页数：5 Pages

TOSHIBA

东芝