SPW35N60CFDMOSFET数据表ic资料供应商报价-114ic电子网

首页 >SPW35N60CFDMOSFET>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
35N60A	文件：851.66 Kbytes Page：5 Pages	35A600VN-channelenhancedfieldeffecttransistor	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司	YFWDIODE
DAM35N60F	文件：260.05 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
DAM35N60H	文件：243.21 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
FCA35N60	文件：347.93 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCA35N60	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCA35N60	文件：770.04 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description SuperFET™isFarichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features •650V@TJ=150°C •Typ.RDS(on)=0.079Ω •Ultralow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCH35N60	文件：436.01 Kbytes Page：8 Pages	N-ChannelSuperFET짰MOSFET Description SuperFET®MOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCH35N60	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGW35N60H	文件：635.16 Kbytes Page：6 Pages	DiscreteIGBT(High-SpeedVseries)600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FGW35N60HD	文件：640.08 Kbytes Page：8 Pages	DiscreteIGBT(High-SpeedVseries)600V/35A 600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
ICE35N60W	文件：964.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	MICROSS MICROSS	MICROSS
ICE35N60W	文件：589.87 Kbytes Page：8 Pages	N-ChannelEnhancementModeMOSFET	ICEMOSIcemos Technology Icemos 技术	ICEMOS
ISPW35N60CFD	文件：335.61 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤118mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXDH35N60B	文件：101.3 Kbytes Page：4 Pages	IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard	IXYS IXYS Integrated Circuits Division	IXYS
IXDP35N60B	文件：101.3 Kbytes Page：4 Pages	IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard	IXYS IXYS Integrated Circuits Division	IXYS
SIHB35N60E	文件：162.62 Kbytes Page：7 Pages	ESeriesPowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHB35N60E	文件：215.86 Kbytes Page：9 Pages	ESeriesPowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHB35N60EF	文件：192.22 Kbytes Page：10 Pages	EFSeriesPowerMOSFETWithFastBodyDiode	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHF35N60E	文件：183.32 Kbytes Page：9 Pages	ESeriesPowerMOSFET FEATURES •Aspecificonresistance(m-cm2)reductionof 25 •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHF35N60E	文件：151.17 Kbytes Page：7 Pages	ESeriesPowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

12 >>>

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市安富世纪电子有限公司	SPW35N60CFDMOSFET	INFINEON	23+	18+	8000	只做原装现货	询价
深圳市威尔健半导体有限公司	SPW35N60CFDMOSFET或IGBT开关IC	INFINEON/英飞凌	23+	TO247	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	SPW35N60CFDMOSFET或IGBT开关IC	INFINEON/英飞凌	2022	TO247	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市科恒伟业电子有限公司	SPW35N60CFDMOSFETIGBTIC	INFINEON/英飞凌	21+	TO247	9800	只做原装正品假一赔十!正规渠道订货!	询价
深圳庞田科技有限公司	SPW35N60CFDMOSFET或IGBT开关IC	INFINEON/英飞凌	2023+	TO-247	20000	AI智能識别、工業、汽車、醫療方案LPC批量及配套一站	询价
深圳市得捷芯城科技有限公司	SPW35N60CFDMOSFET或IGBT	INFINEON/英飞凌	23+	NA/	120	优势代理渠道,原装正品,可全系列订货开增值税票	询价
贸泽芯城（深圳）电子科技有限公司	SPW35W60C3	INFINE	21+	TO-3P	15000	原厂VIP渠道,亚太地区一级代理商,可提供更多数量!	询价
深圳市一线半导体有限公司	SPW40N50	INFINEON	08+(pbfree)	TO-247-3	8866		询价
中科航电（深圳）电子集团有限公司	SPW43N60C3	ST		TO-247	93480	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
深圳市金胜达微科技有限公司	SPW43NM60N	ST	21+	TO-247	100000	原厂订货价格优势,可开13%的增值税票	询价

更多SPW35N60CFDMOSFET供应商更新时间2024-6-19 15:00:00

相关规格书

相关库存