N-Channel Enhancement Mode MOSFET

文件：964.41 Kbytes 页数：4 Pages

MICROSS

N-Channel Enhancement Mode MOSFET

文件：589.87 Kbytes 页数：8 Pages

ICEMOS

Icemos Technology

Superjunction MOSFET Gen1

IceMOS

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤118mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.61 Kbytes 页数：2 Pages

ISC

无锡固电

IGBT with optional Diode

High Speed, Low Saturation Voltage Features ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ●positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● optional ultra fast diode ● International standard

文件：101.3 Kbytes 页数：4 Pages

IXYS

艾赛斯

IGBT with optional Diode

High Speed, Low Saturation Voltage Features ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ●positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● optional ultra fast diode ● International standard

文件：101.3 Kbytes 页数：4 Pages

IXYS

艾赛斯