600V N-Channel MOSFET

Description SuperFET™ is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. Features • 650V @ TJ= 150°C •Typ.RDS(on) = 0.079Ω • Ultra low

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FAIRCHILD

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 35A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 79mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，35 A，98 mΩ，TO-3P

SuperFET®MOSFET 是飞兆半导体第一代利用电荷平衡技术实现出色低导通电阻和更低栅极电荷性能的高压超级结（SJ）MOSFET 系列产品。这项技术专用于最小化传导损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。因此，SuperFET MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 •650V @TJ = 150°C\n•典型值RDS(on) = 79mΩ\n•超低栅极电荷（典型值Qg = 139nC )\n•低有效输出电容（典型值Coss.eff = 340pF )\n•100% 经过雪崩击穿测试;

ONSEMI

安森美半导体