Discrete IGBT (High-Speed V series) 600V / 35A

600V / 35A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit

文件：640.08 Kbytes 页数：8 Pages

FUJI

富士通

分立 IGBT

FUJI

富士通

N-Channel Enhancement Mode MOSFET

文件：964.41 Kbytes 页数：4 Pages

MICROSS

N-Channel Enhancement Mode MOSFET

文件：589.87 Kbytes 页数：8 Pages

ICEMOS

Icemos Technology

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤118mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.61 Kbytes 页数：2 Pages

ISC

无锡固电