High-Frequency Low-Noise Amp, Differential Amp Applications

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. • The FH102 is formed with two chips, being equivalent to the 2SC5226, placed in one package. • Optimal for differential amplification due to excellent thermal

文件：66.91 Kbytes 页数：5 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. • The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one p

文件：69.03 Kbytes 页数：6 Pages

SANYO

三洋

RF Transistor

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package • Optimal for differential amplification due to excellent thermal

文件：510.26 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

RF Transistor

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package • Optimal for differential amplification due to excellent thermal

文件：510.26 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

铝电解电容

CAPXON

丰宾电子

直插铝电解电容

CAPXON

丰宾电子

Package：6-TSSOP，SC-88，SOT-363；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2 NPN 10V 7GHZ 6MCP

ONSEMI

安森美半导体