Discrete IGBT (High-Speed V series) 600V / 50A

文件：646.63 Kbytes 页数：8 Pages

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Discrete IGBT (High-Speed V series) 600V / 50A

文件：671.72 Kbytes 页数：8 Pages

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Insulated Gate Bipolar Transistor (IGBT)

文件：176.19 Kbytes 页数：9 Pages

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High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh

文件：355.61 Kbytes 页数：11 Pages

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